| 等级Grade | 精选级（Z 级） ZeroMPD Production Grade(Z Grade) | 工业级（P 级） Standard Production Grade(P Grade) | 测试级（D 级） Dummy Grade (D Grade) | ||
| 直径 Diameter | 149.5 mm~150.0 mm | ||||
| 厚度 Thickness | 4H-N | 350 μm±15 μm | 350 μm±25 μm | ||
| 4H-SI | 500 μm±15 μm | 500 μm±25 μm | |||
| 晶片方向 Wafer Orientation | Off axis : 4.0° toward <1120 >±0.5° for 4H-N, On axis : <0001>±0.5° for 4H-SI | ||||
| 微管密度 1 Micropipe Density | 4H-N | ≤0.2 cm-2 | ≤2 cm-2 | ≤15cm-2 | |
| 4H-SI | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ||
| 电阻率 1 Resistivity | 4H-N | 0.015~0.024 Ω·cm | 0.015~0.028 Ω·cm | ||
| 4H-SI | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |||
| 主定位边方向 Primary Flat Orientation | {10-10} ±5.0° | ||||
| 主定位边长度 Primary Flat Length | 4H-N | 47.5 mm±2.0 mm | |||
| 4H-SI | Notch | ||||
| 边缘去除 Edge Exclusion | 3 mm | ||||
| 局部厚度变化/总厚度变化/弯曲度/翘曲度 LTV/TTV/Bow /Warp | ≤2.5 μm/≤6 μm/≤25 μm/≤35 μm | ≤5 μm/≤15 μm/≤40 μm/≤60 μm | |||
| 表面粗糙度 1 Roughness | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| 边缘裂纹 (强光灯观测) Edge Cracks By High Intensity Light 六方空洞 (强光灯观测) 1 Hex Plates By High Intensity Light 多型 (强光灯观测) 1 Polytype Areas By High Intensity Light 目测包裹物 (日光灯下观测) Visual Carbon Inclusions 划痕 (强光灯观测)2 Silicon Surface Scratches By High Intensity Light | None Cumulative area ≤0.05% None Cumulative area ≤0.05% None | Cumulative length ≤ 20 mm, single length≤2 mm Cumulative area ≤0.1% Cumulative area≤3% Cumulative area ≤3% Cumulative length≤1×wafer diameter | |||
| 崩边 (强光灯观测) Edge Chips By High Intensity Light | None permitted ≥0.2mm width and depth | 7 allowed, ≤1 mm each | |||
| 穿透螺位错 3（TSD） Threading screw dislocation | ≤500 cm-2 | N/A | |||
| 基平面位错 3（BPD） Base plane dislocation | ≤1000 cm-2 | N/A | |||
| 硅面污染物 (强光灯观测) Silicon Surface Contamination By High Intensity Light | None | ||||
| 包装 Packaging | Multi-wafer Cassette Or Single Wafer Container | ||||
Notes:
1Defects limits apply to entire wafer surface except for the edge exclusion area. 2The scratches should be checked on Si face only.
3 The dislocation data is only from KOH etched wafers.
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6 inch diameter Silicon Carbide (SiC) Substrate Specification p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD 8inch SiC wafer Silicon Carbide Wafer prime dummy research grade 500um 350 um 12 inch Dia300x1.0mmt Sapphire Wafer Substrate C-Plane SSP/DSP
